| ‘lllvVISHAYQVsA2B-E3, sA2D-E3, sA2G-E3, sA2J-E3, SA2K-E3, sA2M-E3www.vishay.comVishay General Semiconductor Junction Capacitance (pF) instantaneous Reverse Current (HA) 1000 T00 3 Percent OI Rated Peak Reverse Voitage (%) Fig. 5 - Typical Reverse Leakage Characteristics Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance Transient Thermal impedance (“C/W) t- Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do_214Ac (sMA) Cathode Band Mounting Pad Layout 0.074 (I .80) T 0,0(:;3‘r(\‘i> BB) ,‘ “i MAX- 0065 (T 65 0.110 (2.79)0.049 (I 25 0.100 (2.54) 0 l 0.177‘(4.50) l f 0.157 (3.90) 0 mg (0 305] M60 U 52) + j MIN. ‘0 006 (0 152) 0.200 (5 20) 0.000 (2.20) REF0.070 (1.00) 0 060 (1.52) +0 030 (0.76) 0 000 (0.203)0 (0I 0.200 (5 20)0.I94 (4 03) 3 Document Number: 88969For technical questions within your region: DiodesArnericas@vishay.c0m, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14?Aug-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.com/doc?91000 |